 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SI8461DB Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 0.100 at VGS = - 4.5 V - 20 0.118 at VGS = - 2.5 V 0.140 at VGS = - 1.8 V 0.205 at VGS = - 1.5 V ID (A)a, e - 3.7 - 3.4 - 3.1 -2 9.5 nC Qg (Typ.) FEATURES * Halogen-free According to IEC 61249-2-21 Definition * TrenchFET(R) Power MOSFET * Compliant to RoHS Directive 2002/95/EC APPLICATIONS * Load Switch * Battery Switch * Charger Switch MICRO FOOT Bump Side View Backside View S 8 461 S 2 G 1 XXX G S 3 D 4 Device Marking: 8461 xxx = Date/Lot Traceability Code Ordering Information: SI8461DB-T2-E1 (Lead (Pb)-free and Halogen-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TA = 25 C Symbol VDS VGS TA = 70 C TA = 25 C TA = 70 C Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 C TA = 25 C TA = 25 C Maximum Power Dissipation TA = 70 C TA = 25 C TA = 70 C Operating Junction and Storage Temperature Range Package Reflow Conditionsc VPR IR/Convection TJ, Tstg PD IDM IS Limit - 20 8 - 3.7a ID - 3a - 2.5b - 1.9b - 20 - 1.5a - 0.65b 1.8a 1.1a 0.78b 0.5b - 55 to 150 260 260 C W A Unit V www..com Continuous Drain Current (TJ = 150 C) Notes: a. Surface mounted on 1" x 1" FR4 board with full copper, t = 10 s. b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 10 s. c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering. d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump. e. Based on TA = 25 C. Document Number: 65001 S09-1502-Rev. B, 10-Aug-09 www.vishay.com 1 SI8461DB Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a, b Symbol t = 10 s t = 10 s RthJA Typical 55 125 Maximum 70 160 Unit C/W Maximum Junction-to-Ambientc, d Notes: a. Surface mounted on 1" x 1" FR4 board with full copper. b. Maximum under steady state conditions is 100 C/W. c. Surface mounted on 1" x 1" FR4 board with minimum copper. d. Maximum under steady state conditions is 190 C/W. SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = - 250 A ID = - 250 A VDS = VGS, ID = - 250 A VDS = 0 V, VGS = 8 V VDS = - 20 V, VGS = 0 V VDS = - 20 V, VGS = 0 V, TJ = 70 C VDS - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 1.5 A Drain-Source On-State Resistancea RDS(on) VGS = - 2.5 V, ID = - 1.5 A VGS = - 1.8 V, ID = - 1 A VGS = - 1.5 V, ID = - 0.5 A Forward Transconductance Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDD = - 10 V, RL = 10 ID - 1 A, VGEN = - 8 V, Rg = 1 VDD = - 10 V, RL = 10 ID - 1 A, VGEN = - 4.5 V, Rg = 1 VGS = - 0.1 V, f = 1 MHz VDS = - 10 V, VGS = - 8 V, ID = - 1 A VDS = - 10 V, VGS = - 4.5 V, ID = 1 A VDS = - 10 V, VGS = 0 V, f = 1 MHz 610 120 95 16 9.5 0.9 2.6 6.5 15 25 35 10 7 12 32 12 25 40 55 15 15 20 50 20 ns 24 15 nC pF a Symbol Test Conditions Min. - 20 Typ. Max. Unit V - 12 2.5 - 0.4 - 1.0 100 -1 - 10 - 10 0.083 0.098 0.115 0.136 7 0.100 0.118 0.140 0.205 mV/C V nA A A gfs VDS = - 10 V, ID = - 1 A S www..com Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time www.vishay.com 2 Document Number: 65001 S09-1502-Rev. B, 10-Aug-09 SI8461DB Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb IF = - 1 A, dI/dt = 100 A/s, TJ = 25 C IS = - 1 A, VGS = 0 V - 0.8 15 10 9 6 TA = 25 C - 1.5 - 20 - 1.2 30 20 A V ns nC ns Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www..com Document Number: 65001 S09-1502-Rev. B, 10-Aug-09 www.vishay.com 3 SI8461DB Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 20 VGS = 5 V thru 2.5 V 16 I D - Drain Current (A) I D - Drain Current (A) 4 VGS = 2 V 5 12 3 TC = 25 C 8 VGS = 1.5 V 4 VGS = 1 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 2 TC = 125 C 1 TC = - 55 C 0 0.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.25 VGS = 1.5 V R DS(on) - On-Resistance () 0.20 C - Capacitance (pF) VGS = 1.8 V 1200 1500 Transfer Characteristics 0.15 VGS = 2.5 V 0.10 VGS = 4.5 V 0.05 900 Ciss 600 300 Crss 0 Coss 0.00 0 5 10 I - Drain Current (A) 15 20 0 4 8 12 16 20 D www..com On-Resistance vs. Drain Current and Gate Voltage VDS - Drain-to-Source Voltage (V) Capacitance 1.3 8 ID = 1 A VGS - Gate-to-Source Voltage (V) ID = 1 A 1.2 R DS(on) - On-Resistance VGS = 1.8 V, 1.5 V (Normalized) 1.1 VGS = 4.5 V, 2.5 V 1.0 6 VDS = 10 V 4 VDS = 16 V 2 0.9 0 0 4 8 12 16 0.8 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge On-Resistance vs. Junction Temperature www.vishay.com 4 Document Number: 65001 S09-1502-Rev. B, 10-Aug-09 SI8461DB Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 100 0.20 ID = 1 A R DS(on) - On-Resistance () 0.16 I S - Source Current (A) 10 TJ = 150 C 0.12 TJ = 125 C TJ = 25 C 1 0.08 TJ = 25 C 0.04 0.1 0.0 0.00 0.3 0.6 0.9 1.2 1.5 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.9 25 On-Resistance vs. Gate-to-Source Voltage 0.8 ID = 250 A 0.7 Power (W) VGS(th) (V) 20 15 0.6 10 0.5 5 0.4 0.3 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Time (s) 10 100 1000 TJ - Temperature (C) www..com Threshold Voltage 100 Single Pulse Power, Junction-to-Ambient Limited by RDS(on)* I D - Drain Current (A) 10 100 s 1 TA = 25 C Single Pulse 0.1 BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 1 ms 10 ms 100 ms, 1 s 10 s, DC Safe Operating Area, Junction-to-Ambient Document Number: 65001 S09-1502-Rev. B, 10-Aug-09 www.vishay.com 5 SI8461DB Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 4 1.5 1.2 I D - Drain Current (A) Power Dissipation (W) 3 0.9 2 0.6 1 0.3 0 0 25 50 75 100 125 150 0.0 25 50 75 100 125 150 TA - Ambient Temperature (C) TA - Ambient Temperature (C) Current Derating* Note: When Mounted on 1" x 1" FR4 with Full Copper. Power Derating * The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www..com www.vishay.com 6 Document Number: 65001 S09-1502-Rev. B, 10-Aug-09 SI8461DB Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 100 C/W Notes: Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient (1" x 1" FR4 Board with Full Copper) 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 PDM t1 Notes: 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 190 C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 1000 www..com Normalized Thermal Transient Impedance, Junction-to-Ambient (1" x 1" FR4 Board with Minimum Copper) Document Number: 65001 S09-1502-Rev. B, 10-Aug-09 www.vishay.com 7 SI8461DB Vishay Siliconix PACKAGE OUTLINE MICRO FOOT: 4-BUMP (2 x 2, 0.5 mm PITCH) 4 x O 0.24 to 0.26 Note 4 Solder Mask ~ O 0.25 2 3 e A1 A2 Bump Note 2 4xOb S S D G s s e D D e 1 4 Recommended Land 8461 XXX Mark on Backside of Die Notes (Unless otherwise specified): 1. All dimensions are in millimeters. 2. Four (4) solder bumps are lead (Pb)-free 95.5Sn/3.8Ag/0.7Cu with diameter 0.30 mm to 0.32 mm. 3. Backside surface is coated with a Ti/Ni/Ag layer. 4. Non-solder mask defined copper landing pad. 5. * is location of pin 1. Millimetersa Min. 0.462 0.220 0.242 0.300 0.230 0.920 Nom. 0.505 0.250 0.255 0.310 0.500 0.250 0.960 0.270 1.000 0.0090 0.0362 Max. 0.548 0.280 0.268 0.320 Min. 0.0181 0.0086 0.0095 0.0118 Inches Nom. 0.0198 0.0098 0.0100 0.0122 0.0197 0.0098 0.0378 0.0106 0.0394 Max. 0.0215 0.0110 0.0105 0.0126 Dim. A www..com A1 A2 b e s D Notes: a. Use millimeters as the primary measurement. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65001. www.vishay.com 8 A Document Number: 65001 S09-1502-Rev. B, 10-Aug-09 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. www..com Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
Price & Availability of SI8461DB
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |